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JDV2S02E
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S02E
VCO for UHF band
Unit: mm Small Package High Capacitance Ratio: C1V/C4V = 2.0 (typ.) Low Series Resistance: rs = 0.60 Ω (typ.)
· · ·
Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C
JEDEC JEITA TOSHIBA
― ― 1-1G1A
Electrical Characteristics (Ta = 25°C)
Characteristics Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C1V C4V C1V/C4V rs I R = 1 mA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ¾ VR = 1 V, f = 470 MHz Test Condition
Weight: 0.0014 g
Min 10 ¾ 1.8 0.83 1.8 ¾
Typ. ¾ ¾ 2.05 1.03 2 0.6
Max ¾ 3 2.3 1.23 ¾ 0.
JDV2S02E Datasheet
