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JDV2S01S
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S01S
VCO for UHF band
Unit in mm • • • High capacitance ratio: C1V/C4V = 2.0 (typ.) Low series resistance: rs = 0.5 Ω (typ.) This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 −55~150 Unit V °C °C
JEDEC EIAJ
1-1K1A
Electrical Characteristics (Ta = 25°C)
Characteristics Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C1V C4V C1V/C4V rs IR = 1 µA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 1 V, f = 470 MHz Test Condition
TOSHIBA
Min 10 2.85 1.35 1.8
Typ. 3.15 1.57 2 0.5
Max 3 3.45 1.81 2.2 0.
JDV2S01S Datasheet
