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JDV2S17S
TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S17S
VCO for UHF Band Radio
• • • High Capacitance Ratio : C1V/C4V = 2.1 (typ.) Low Series Resistance : rs = 0.6 Ω (typ.) This device is suitable for use in a small-size tuner. Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 −55~150 Unit V °C °C
JEDEC JEITA TOSHIBA
― ― 1-1K1A
Weight: 0.0011 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C1V C4V C1V/C4V rs IR = 1 µA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ⎯ VR = 1 V, f = 470 MHz Test Condition Min 10 ⎯ 1.77 0.8 2 ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 0.6 Max ⎯ 3 2.01 1.0 2.2 0.
JDV2S17S Datasheet
