The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
JDV2S13FS
TOSHIBA Diode Silicon Epitaxial Planar Type
www.DataSheet4U.com
JDV2S13FS
VCO for the UHF band
• • • High capacitance ratio: C1V/C4V = 2.8 (typ.) Low series resistance: rs = 0.55 Ω (typ.) This device is suitable for use in a small-size tuner.
ｶｿｰﾄﾞﾏｰｸ
Unit: mm
0.6±0.05 0.1 0.8±0.05
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 −55~150 Unit V °C °C
0.07
M
0.1
A
0.2 ±0.05
0.1±0.05
0.48 +0.02 -0.03
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
JDV2S13FS Datasheet
