• Part: 2SC1815L
  • Description: Silicon NPN TRANSISTOR
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 138.19 KB
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Toshiba
2SC1815L
2SC1815(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications Unit: mm - High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 m A (max) - Excellent linearity of h FE : h FE (2) = 100 (typ.) at VCE = 6 V, IC = 150 m A : h FE (IC = 0.1 m A)/h FE (IC = 2 m A) = 0.95 (typ.) - Low noise: NF = 0.2d B (typ.) (f = 1 k Hz). - plementary to 2SA1015 (L). (O, Y, GR class). Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 60 50 5 150 50 400 125 -55~125 Unit V V V m A m A m W °C °C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter...