• Part: 2SC1815
  • Description: Silicon Epitaxial Planar Transistor
  • Category: Transistor
  • Manufacturer: Galaxy Microelectronics
  • Size: 297.83 KB
Download 2SC1815 Datasheet PDF
Galaxy Microelectronics
2SC1815
FEATURES - High voltage and high current VCEO=50V(Min),IC=150m A(Max) - Excellent h FE linearity : h FE(2)=100 (Typ) at VCE=6V,IC=150m A h FE(IC=0.1m A) / h FE(IC=2m A=0.95(Typ)) - Low noise - plementary to 2SA1015 APPLICATIONS - Audio frequency general purpose amplifier applications. ORDERING INFORMATION Type No. Marking SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current -Continuous Base Current Collector Dissipation Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V m A m A m W ℃ STM0074A .gmesemi. Product Specification Silicon Epitaxial Planar Transistor ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise...
2SC1815 reference image

Representative 2SC1815 image (package may vary by manufacturer)