2SC1815 Datasheet | GOODWORK

FEATURES Ÿ NPN epitaxial silicon, planar design. Ÿ Collector-emitter voltage VCE=50V. Ÿ Collector current IC=0.15A. Ÿ Transition frequency f T>80MHz @ IC=1m Adc, VCE=10Vdc, f=30MHz. Ÿ In pliance with EU Ro HS 2002/95/EC directives. MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, method 2026 Approx. Weight: 0.008gram Marking:HF C BE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter Vaule VCBO VCEO VEBO IC PC RθJA TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Device Dissipation Thermal Resistance Form Junction to Ambient 625 Junction Temperature Storage Temperature -55~+150 Unit V V V A W OC/W OC OC ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ.Max.Units Collector-Base breakdown voltage V(BR)CBO IC=100u A,IE=0 Collector-Emitter breakdown voltage V(BR)CEO IC=1m...