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TSM15N50 - 500V N-Channel Power MOSFET

General Description

The TSM15N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • Low RDS(ON) 0.44Ω (Max. ) Low gate charge typical @ 39nC (Typ. ) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM15N50CZ C0 TSM15N50CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TC=25℃) Pulsed Drain Current.
  • Peak Diode Recovery dv/dt (Note 3) Single Pulse Avalanche Energy (Note 2).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM15N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 500 0.44 @ VGS =10V ID (A) 14 General Description The TSM15N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. Features ● ● ● Low RDS(ON) 0.44Ω (Max.) Low gate charge typical @ 39nC (Typ.) Improve dv/dt capability Block Diagram Ordering Information Part No.