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TP44400NM - 650V GaN HEMT

General Description

The TP44400NM is a 360mΩ, 650V GaN HEMT device with integrated driver circuit.

The monolithic integration of driver minimizes inductance in the gate loop enabling safe and clean switching even at high-voltage high-frequency operations.

Key Features

  • 650V enhancement mode HEMT with integrated driver.
  • 360mΩ RDSON.
  • 5V PWM input.
  • UVLO protection.
  • Zero reverse recovery.
  • Low quiescent current driver.
  • Adjustable turn-on slew rate.
  • Dv/Dt immunity both with/without driver-supply.
  • Low propagation delay for up to 2MHz operation (Top view) (Bottom View) Figure 1 Device Image (22pin 5×7×0.85 mm QFN Package) 2.0 Topologies and.

📥 Download Datasheet

Datasheet Details

Part number TP44400NM
Manufacturer Tagore
File Size 802.56 KB
Description 650V GaN HEMT
Datasheet download datasheet TP44400NM Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TP44400NM TP44400NM – 360mΩ, 650V GaN HEMT With Integrated Driver and Protection 1.0 Features • 650V enhancement mode HEMT with integrated driver • 360mΩ RDSON • 5V PWM input • UVLO protection • Zero reverse recovery • Low quiescent current driver • Adjustable turn-on slew rate • Dv/Dt immunity both with/without driver-supply • Low propagation delay for up to 2MHz operation (Top view) (Bottom View) Figure 1 Device Image (22pin 5×7×0.85 mm QFN Package) 2.0 Topologies and Applications • As switching FETs in singles, or in pairs as half-bridges • AC-DC, DC-DC, DC-AC converters • PFC applications (totem pole and standard) • High frequency LLC converters • Mobile chargers and laptop adapters • LED and motor drives • Server power supplies RoHS/REACH/Halogen Free Compliance 3.