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TP44110HB - 650V GaN Half-Bridge

General Description

The TP44110HB is a half-bridge IC consisting of two 650 V GaN HEMT power devices.

The low-side (LS) and the high-side (HS) devices are of 90 mΩ each.

This co-packaged solution minimizes inductance in the power loop enabling clean switching even at high-current high-frequency operations.

Key Features

  • 650 V enhancement mode power HEMTs.
  • RDSON: 90 mΩ (Low-side) and 90 mΩ (High-side).
  • IDS: 19 A (max) / IDSpulse: 30 A (max).
  • Adjustable turn-on/off speed.
  • Reverse conduction capability.
  • Zero reverse-recovery loss.
  • High switching frequency capability.
  • Interfaces with 6 V and ≥12 V drivers (see.

📥 Download Datasheet

Datasheet Details

Part number TP44110HB
Manufacturer Tagore
File Size 1.05 MB
Description 650V GaN Half-Bridge
Datasheet download datasheet TP44110HB Datasheet

Other Datasheets by Tagore

Part Number Description
TP44100NM 650V GaN HEMT
TP44100SG 650V GaN HEMT
TP44200NM 650V GaN HEMT
TP44200SG 650V GaN HEMT
TP44400NM 650V GaN HEMT
TP44400SG 650V GaN HEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TP44110HB TP44110HB – 650 V GaN Half-Bridge, 90 mΩ (LS) and 90 mΩ (HS) 1.0 Features • 650 V enhancement mode power HEMTs • RDSON: 90 mΩ (Low-side) and 90 mΩ (High-side) • IDS: 19 A (max) / IDSpulse: 30 A (max) • Adjustable turn-on/off speed • Reverse conduction capability • Zero reverse-recovery loss • High switching frequency capability • Interfaces with 6 V and ≥12 V drivers (see Application Information) • Low-side thermal-pad LV-isolated from the source for better thermal connection even with current-sense resistors (Top View) (Bottom View) Figure 1 Device Image (30 pin 8×10×0.8 mm QFN Package) 2.