Datasheet4U.com

TP44110HB - 650V GaN Half-Bridge

Product Overview

📥 Download Datasheet

TP44110HB 650V GaN Half-Bridge by Tagore - Datasheet Preview — Datasheet preview – TP44110HB

Datasheet Details

Part number	TP44110HB
Manufacturer	Tagore
File Size	1.05 MB
Description	650V GaN Half-Bridge
Datasheet	TP44110HB Datasheet
Additional preview pages of the TP44110HB datasheet.

Product details

Description

The TP44110HB is a half-bridge IC consisting of two 650 V GaN HEMT power devices.

Features

650 V enhancement mode power HEMTs.
RDSON: 90 mΩ (Low-side) and 90 mΩ (High-side).
IDS: 19 A (max) / IDSpulse: 30 A (max).
Adjustable turn-on/off speed.
Reverse conduction capability.
Zero reverse-recovery loss.
High switching frequency capability.
Interfaces with 6 V and ≥12 V drivers (see.

📁 Similar Datasheet

TP4045C - Photovoltaic Solar Cell Protection Schottky Diode (HY)
TP4054 - Standalone Linear Li-lon Battery Charger (NanJing Top Power)
TP4055 - 500mA Linear Li-Ion Battery Charger (NanJing Top Power)
TP4055C - 30mA-600mA linear lithium-ion battery charger (ChipSourceTek)
TP4056 - 1A linear lithium-ion battery charger (UMW)
TP4056 - 1A Standalone Linear Li-lon Battery Charger (NanJing Top Power)
TP4056 - 1A lithium battery charger (TPOWER)
TP4056 - 1A Linear Li-Ion Battery Charger (Chipown)

Other Datasheets by Tagore

TP44100NM - 650V GaN HEMT
TP44100SG - 650V GaN HEMT
TP44200NM - 650V GaN HEMT
TP44200SG - 650V GaN HEMT
TP44400NM - 650V GaN HEMT
TP44400SG - 650V GaN HEMT

Published: Dec 4, 2024 |