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TP44100NM - 650V GaN HEMT

General Description

The TP44100NM is a 90mΩ, 650V GaN HEMT device with integrated driver circuit.

The monolithic integration of driver minimizes inductance in the gate loop enabling safe and clean switching even at high-voltage high-frequency operations.

Key Features

  • 650V enhancement mode HEMT with integrated driver.
  • 90mΩ RDSON.
  • 5V PWM input.
  • UVLO protection.
  • Zero reverse recovery.
  • Low quiescent current driver.
  • Adjustable turn-on slew rate.
  • Dv/Dt immunity both with/without driver-supply.
  • Low propagation delay for up to 2MHz operation 2.0 Topologies and.

📥 Download Datasheet

Datasheet Details

Part number TP44100NM
Manufacturer Tagore
File Size 191.52 KB
Description 650V GaN HEMT
Datasheet download datasheet TP44100NM Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Summary Only TP44100NM TP44100NM – 90mΩ, 650V GaN HEMT with Integrated Driver and Protection 1.0 Features • 650V enhancement mode HEMT with integrated driver • 90mΩ RDSON • 5V PWM input • UVLO protection • Zero reverse recovery • Low quiescent current driver • Adjustable turn-on slew rate • Dv/Dt immunity both with/without driver-supply • Low propagation delay for up to 2MHz operation 2.0 Topologies and Applications • As switching FETs in singles, or in pairs as half-bridges • AC-DC, DC-DC, DC-AC converters • PFC applications (totem pole and standard) • High frequency LLC converters • Mobile chargers and laptop adapters • LED and motor drives • Server power supplies (Top view) (Bottom View) Figure 1 Device Image (22pin 5×7×0.