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VN06F - N-Channel Enhancement-Mode Vertical DMOS Power FETs

Features

  • D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling ca.

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Datasheet Details

Part number VN06F
Manufacturer Supertex
File Size 221.11 KB
Description N-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet download datasheet VN06F Datasheet

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Full PDF Text Transcription

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"§upertexinc. VN06F N-Channel Enhancement-Mode Vertical CMOS Power FETs Ordering Information BVoss ' BVDGS 550V 600V RDs(ON) (max) 200 200 'OlON) (min) 0.25A 0.2SA TO-39 VN0655N2 VN0660N2 Order Number' Package T0-92 T0-220 VN0655N3 VN065SNS VN0660N3 VN0660NS Dice VN06SSND VN0660ND Features D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
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