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VN0635 - (VN0635 / VN0640) N-Channel Enhancement-Mode Vertical DMOS FETs

Features

  • s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabiliti.

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Datasheet Details

Part number VN0635
Manufacturer Supertex
File Size 57.60 KB
Description (VN0635 / VN0640) N-Channel Enhancement-Mode Vertical DMOS FETs
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www.DataSheet4U.com VN0635 VN0640 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 350V 400V † MIL visual screening available RDS(ON) (max) 10Ω 10Ω ID(ON) (min) 0.75A 0.75A Order Number / Package TO-92 VN0635N3 VN0640N3 Die† VN0635ND VN0640ND Features s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
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