s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices
Order Number / Package
TO-39
TO-92
Die†
VN0645N2.
VN0650N3 VN0650ND
7
Advanced DMOS Technology
The VN0650 is NOT recommended for new designs. Please use VN2450 instead. These enhancement-mode (normally-.
VN06D- N-Channel Enhancement-Mode Vertical DMOS Power FETs
VN06E- N-Channel Enhancement-Mode Vertical DMOS Power FETs
Full PDF Text Transcription
Click to expand full text
VN0645 VN0650
N-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS 450V
500V
† MIL visual screening available
RDS(ON) (max)
16Ω 16Ω
ID(ON) (min)
0.5A
0.5A
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information.
Features
s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices
Order Number / Package
TO-39
TO-92
Die†
VN0645N2
—
—
— VN0650N3 VN0650ND
7
Advanced DMOS Technology
The VN0650 is NOT recommended for new designs. Please use VN2450 instead.