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ST7407
P Channel Enhancement Mode MOSFET
-3.4A
DESCRIPTION
The ST7407 is the P-Channel logic enhancement mode power field effect transistors It is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION SOT-323 (SC-70)
3 D GS 12
1.Gate 2.Source 3.Drain PART MARKING SOT-323 (SC-70)
FEATURE
z -20V/-3.4A, RDS(ON) = 100m-ohm @VGS = -4.5V
z -20V/-2.4A, RDS(ON) = 125m-ohm @VGS = -2.5V
z -20V/-1.
ST7407 Datasheet
