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ST75N75 - 75A N-Channel Enhancement Mode MOSFET

Description

ST75N75 is used trench technology to provide excellent RDS(on) and gate charge.

Those devices are suitable for use as load switch or in PWM applications.

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Datasheet Details

Part number ST75N75
Manufacturer STANSON
File Size 672.78 KB
Description 75A N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST75N75 Datasheet

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Full PDF Text Transcription

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ST75N75 N Channel Enhancement Mode MOSFET 75.0A DESCRIPTION ST75N75 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO220-3L FEATURE 75V/40.0A, RDS(ON) = 8mΩ (Typ.) @VGS = 10V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-220 package design MARKING PIN CONFI STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. ST75N75 2011. V1 ST75N75 N Channel Enhancement Mode MOSFET 75.
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