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ST7400 - N-Channel Enhancement Mode MOSFET

Description

ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number ST7400
Manufacturer STANSON
File Size 383.14 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST7400 Datasheet

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Full PDF Text Transcription

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ST7400 N Channel Enhancement Mode MOSFET 2.8A DESCRIPTION ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-323 (SC-70) 3 D G S 1 2 1.Gate 2.Source 3.Drain PART MARKING SOT-323 FEATURE 30V/2.8A, RDS(ON) = 77mΩ @VGS =10V 30V/2.5A, RDS(ON) = 85mΩ @VGS = 4.5V 30V/1.5A, RDS(ON) = 170mΩ @VGS = 2.
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