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STN4546 - MOSFET

Description

STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STN4546
Manufacturer Stanson Technology
File Size 357.12 KB
Description MOSFET
Datasheet download datasheet STN4546 Datasheet

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STN4546 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE � 40V/10.0A, RDS(ON) = 20mΩ (Typ.) @VGS = 10V � 40V/8.0A, RDS(ON) = 23mΩ @VGS = 4.5V � 40V/6.0A, RDS(ON) = 27mΩ @VGS = 2.
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