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STN4546
N Channel Enhancement Mode MOSFET
6.0A
DESCRIPTION
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.
PIN CONFIGURATION SOP-8
FEATURE
� 40V/10.0A, RDS(ON) = 20mΩ (Typ.) @VGS = 10V
� 40V/8.0A, RDS(ON) = 23mΩ @VGS = 4.5V
� 40V/6.0A, RDS(ON) = 27mΩ @VGS = 2.