Click to expand full text
STN4526
N Channel Enhancement Mode MOSFET
10.0A
DESCRIPTION
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.
PIN CONFIGURATION SOP-8
FEATURE
40V/10.0A, RDS(ON) = 25mΩ (Typ.) @VGS = 10V
40V/8.0A, RDS(ON) = 31mΩ @VGS = 4.
STN4526 Datasheet
