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STN4536 - MOSFET

Description

STN4536 is Due N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STN4536
Manufacturer Stanson Technology
File Size 698.21 KB
Description MOSFET
Datasheet download datasheet STN4536 Datasheet

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3 STN4536 Due N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN4536 is Due N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE 40V/10.0A, RDS(ON) = 25mΩ @VGS = 10V 40V/8.0A, RDS(ON) = 31mΩ @VGS = 4.
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