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ST3422A
N Channel Enhancement Mode MOSFET
6.0A
DESCRIPTION
The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high
side switching.
PIN CONFIGURATION SOT-23-3L
3
D GS
12
1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L
3
FEATURE
60V/6.0A, RDS(ON) = 28mΩ (Typ.) @VGS = 10V
60V/2.5A, RDS(ON) = 38mΩ @VGS = 4.5V
60V/1.5A, RDS(ON) = 100mΩ @VGS = 2.
ST3422A Datasheet
