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ST3421SRG
P Channel Enhancement Mode MOSFET
-5.0A
DESCRIPTION
ST3421SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23
3 D G 1
S 2
FEATURE
-60V/-5.0A, RDS(ON) = 150m-ohm (Typ.) @VGS = -10V
-60V/-2.5A, RDS(ON) = 185m-ohm @VGS = -4.
ST3421SRG Datasheet
