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ST3400S23RG - N-Channel Enhancement Mode MOSFET

Description

The ST3400S23RG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

This high-density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number ST3400S23RG
Manufacturer Stanson Technology
File Size 394.51 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST3400S23RG Datasheet

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Full PDF Text Transcription

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ST3400S23RG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400S23RG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching. PIN CONFIGURATION SOT-23-3L 3 D G S 1 2 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L 3 A0YA 1 2 Y: Year Code A: Week Code FEATURE 30V/5.8A, RDS(ON) = 28mΩ (Typ.) @VGS = 10V 30V/4.8A, RDS(ON) = 33mΩ @VGS = 4.5V 30V/4.0A, RDS(ON) = 40mΩ @VGS = 2.
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