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ST3414
N Channel Enhancement Mode MOSFET
4.0A
DESCRIPTION
ST3414 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L
3 D GS 12
1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L
FEATURE
z 20V/4.2A, RDS(ON) = 40mΩ ( Typ.) @VGS = 4.5V
z 20V/3.4A, RDS(ON) = 55 mΩ @VGS = 2.5V
z 20V/2.8A, RDS(ON) = 75 mΩ @VGS = 1.
ST3414S23RG Datasheet
