The ST3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
| Part number | ST3413 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 164.86 KB |
| Description | P Channel Enhancement Mode MOSFET |
| Datasheet |
 ST3413 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| ST3485E | TRASMIT AT UP TO 12MBPS TRUE RS-485/RS-422 TRANSCEIVER | STMicroelectronics |
| ST3485EB | RS-485/RS-422 transceiver | STMicroelectronics |
| ST3485EC | RS-485/RS-422 transceiver | STMicroelectronics |
| ST3485EI | RS-485/RS-422 transceiver | STMicroelectronics |
| ST3485EIY | RS-485/RS-422 transceiver | STMicroelectronics |
| Part Number | Description |
|---|---|
| ST3413A | MOSFET |
| ST3414 | MOSFET |
| ST3414A | 3A N-Channel Enhancement Mode MOSFET |
| ST3414S23RG | MOSFET |
| ST3400 | N Channel Enhancement Mode MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
