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ST3413A
P Channel Enhancement Mode MOSFET
-3.5A
DESCRIPTION
ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23
3 D GS
12
1.Gate 2.Source 3.Drain PART MARKING SOT-23
FEATURE
-20V/-3.4A, RDS(ON) = 70mΩ (Typ.) @VGS = -4.5V
-20V/-2.4A, RDS(ON) = 80mΩ @VGS = -2.5V
-20V/-1.7A, RDS(ON) = 125mΩ @VGS = -1.
ST3413A Datasheet
