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SSS8205 - Dual N-Channel MOSFET

Datasheet Summary

Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Surface Mount package. PB Free. G1(6) S1(1) G2(4) S2(3) Marking Code 8205 o.

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Datasheet Details

Part number SSS8205
Manufacturer South Sea Semiconductor
File Size 208.25 KB
Description Dual N-Channel MOSFET
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SSS8205 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS (V) 18V ID (A) 5A RDS(ON) (m ) Max 25 @VGS = 4.5V 45 @VGS = 2.5V D1 (2, 5) 1 TSOP-6 (SOT-23-6) 82 05 YW D2 (2, 5) FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Surface Mount package. PB Free. G1(6) S1(1) G2(4) S2(3) Marking Code 8205 o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed b o Symbol VDS VGS ID IDM a Limit 18 + - 10 5 25 2 1.
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