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SSS2309 - P-Channel MOSFET

Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package. S G.

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Datasheet Details

Part number SSS2309
Manufacturer South Sea Semiconductor
File Size 76.90 KB
Description P-Channel MOSFET
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Full PDF Text Transcription

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SSS2309 P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 130 @VGS = -4.5V -20V -2.3A 190 @VGS = -2.5V G S D SOT-23 D FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -20 + - 10 -2.3 -8 -1.25 1.
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