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CXG1045N - High Power DPDT Switch

Description

The CXG1045N is a DPDT (Dual Pole Dual Throw) antenna switch MMIC used in personal communication handsets such as GSM, GSM1800 or dualband.

This IC is designed using the Sony's GaAs J-FET process.

Features

  • Low insertion loss: 8 pin SSOP (Plastic) 0.4dB (Typ. ) @900MHz 0.7dB (Typ. ) @1.8GHz.
  • High power switching P1dB: 38dBm (Typ. ) @900MHz 37dBm (Typ. ) @1.8GHz.
  • Small package SSOP-8pin: (3 × 6.4 × 1.25mm).
  • Low current: 200µA (Typ. ).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CXG1045N High Power DPDT Switch for GSM For the availability of this product, please contact the sales office. Description The CXG1045N is a DPDT (Dual Pole Dual Throw) antenna switch MMIC used in personal communication handsets such as GSM, GSM1800 or dualband. This IC is designed using the Sony's GaAs J-FET process. Features • Low insertion loss: 8 pin SSOP (Plastic) 0.4dB (Typ.) @900MHz 0.7dB (Typ.) @1.8GHz • High power switching P1dB: 38dBm (Typ.) @900MHz 37dBm (Typ.) @1.8GHz • Small package SSOP-8pin: (3 × 6.4 × 1.25mm) • Low current: 200µA (Typ.) Application • GSM900 or GSM1800 handsets • GSM900/GSM1800 dualband handsets Structure GaAs J-FET MMIC Operating Condition Control voltage: Vctl (H) – Vctl (L): 2.5 to 5V @Ta = 25°C ∗ GaAs MMICs are ESD sensitive devices.
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