Datasheet4U Logo Datasheet4U.com

SSF1030D - MOSFET

Description

The SSF1030D is a new generation of middle voltage and high current N

Channel enhancement mode trench power MOSFET.

This new technology increases the device reliability and electrical parameter repeatability.

SSF1030D is assembled in high reliability and qualified assembly house.

📥 Download Datasheet

Datasheet Details

Part number SSF1030D
Manufacturer Silikron
File Size 428.82 KB
Description MOSFET
Datasheet download datasheet SSF1030D Datasheet

📁 Similar Datasheet

  • SSF1016 - Power switching application (Silikron Semiconductor Co)
  • SSF1020 - Power switching application (Silikron Semiconductor Co)
  • SSF1020D - 100V N-Channel MOSFET (GOOD-ARK)
  • SSF1090 - N-Channel enhancement mode trench power MOSFET (Silikron Semiconductor)
  • SSF1090 - 100V N-Channel MOSFET (Good-Ark)
  • SSF10N60A - Advanced Power MOSFET (Samsung Electronics)
  • SSF10N60B - 600V N-Channel MOSFET (Fairchild Semiconductor)
  • SSF10N65 - 650V N-Channel MOSFET (GOOD-ARK)
  • SSF10N80A - Advanced Power MOSFET (Samsung Electronics)
  • SSF10N90A - Advanced Power MOSFET (Samsung Electronics)
Other Datasheets by Silikron

Full PDF Text Transcription

Click to expand full text
SSF1030D Feathers: „ Advanced trench process technology „ Ultra low Rdson, typical 23mohm „ High avalanche energy, 100% test „ Fully characterized avalanche voltage and current ID =45A BV=100V Rdson=23mΩ（typ.） Description: The SSF1030D is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1030D is assembled in high reliability and qualified assembly house.
Published: |