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Main Product Characteristics:
VDSS
100V
RDS(on) 20.5mΩ (typ.)
ID 45A ①
Features and Benefits:
TO-220
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSF1030
Marking and pin Assignment
Schematic diagram
Description:
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
SSF1030 Datasheet
