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SSF1030B - MOSFET

Description

The SSF1030B is a new generation of middle voltage and high current N

Channel enhancement mode trench power MOSFET.

This new technology increases the device reliability and electrical parameter repeatability.

SSF1030B is assembled in high reliability and qualified assembly house.

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Datasheet Details

Part number SSF1030B
Manufacturer Silikron
File Size 368.73 KB
Description MOSFET
Datasheet download datasheet SSF1030B Datasheet

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Full PDF Text Transcription

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SSF1030B Feathers:  Advanced trench process technology  Ultra low Rdson, typical 25mohm  High avalanche energy, 100% test  Fully characterized avalanche voltage and current ID =7A BV=100V Rdson=25mΩ（typ.） Description: The SSF1030B is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1030B is assembled in high reliability and qualified assembly house.
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