SSF2610E - MOSFET

Datasheet Summary

Description

The SSF2610E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID = 8A RDS(ON) < 23mΩ @ VGS=1.8V RDS(ON) < 18mΩ @ VGS=2.5V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating：2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Schematic diagram Marking and pin Assignment.

Silikron Semiconductor

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Datasheet Details

Part number	SSF2610E
Manufacturer	SilikrON Semiconductor
File Size	320.23 KB
Description	MOSFET
Datasheet	SSF2610E Datasheet
Additional preview pages of the SSF2610E datasheet.

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DESCRIPTION The SSF2610E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. SSF2610E GENERAL FEATURES ● VDS = 20V,ID = 8A RDS(ON) < 23mΩ @ VGS=1.8V RDS(ON) < 18mΩ @ VGS=2.5V RDS(ON) < 14mΩ @ VGS=4.

Published: Sep 22, 2016 |