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SSF2616E - Dual N-Channel MOSFET

This page provides the datasheet information for the SSF2616E, a member of the SSF2616E-GOOD Dual N-Channel MOSFET family.

Datasheet Summary

Description

The SSF2616E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

  • VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating：2000V HBM.
  • High Power and current handing capability.
  • Lead free product.
  • Surface Mount Package Schematic Diagram Marking and Pin Assignment.

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Datasheet preview – SSF2616E

Datasheet Details

Part number SSF2616E
Manufacturer GOOD-ARK
File Size 716.70 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SSF2616E Datasheet
Additional preview pages of the SSF2616E datasheet.

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Full PDF Text Transcription

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DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. SSF2616E 20V Dual N-Channel MOSFET GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.
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