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g Siliconix incorporated
VPDV24
P-Channel Enhancement-Mode MOSFET
DESIGNED FOR:
• Switching • Amplification
FEATURES
• High Breakdown > 240 V
• LowrOS(on)<10n
TYPE Single
PACKAGE
DEVICE
TO-205AD • VP2410B
TO-92
• VP2410L BS208
Chip
• Available as above specifications
GEOMETRY DIAGRAM
Gate Pad
............... 10.005
(0.127) 0.007 (0.178)
Source Pad 0.006
(0.152)
...."•........••••'........•....••••1........•..•..•••1.....•.....••..•1•.......•.•..••..••.......•....•11.......•...•.......•...•.......•...•.......•...•.....•.....•.....•.....•.....•.....•.....•.......•....•......•.......•......•.......•.........•....•.........•....•.........l1.l...•i.........•
0.058 (1.47)
~1.~~~0.~05~3~~~.I0.007
(0.178)
" 1 ' • .11
•• 111 ••••
(1.35)
..
VPDV24 Datasheet
