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VPDV10 - P-Channel Enhancement-Mode MOSFET

Features

  • Low rDS(on) < 5 n TYPE Single Quad.

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Datasheet Details

Part number VPDV10
Manufacturer Siliconix
File Size 253.02 KB
Description P-Channel Enhancement-Mode MOSFET
Datasheet download datasheet VPDV10 Datasheet

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Full PDF Text Transcription

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VPDV10 . HSiliconix incorporatec P-Channel Enhancement-Mode MOSFET DESIGNED FOR: C .. ,i ....... hir"'ln ..... ,' '~J' '" 'bI • Amplification FEATURES • Low rDS(on) < 5 n TYPE Single Quad IPACKAGE DEVICE TO-205AD • VP08088, VP10088 TO-92 • VP0808L, VP1008L TO-237 • VP0808M, VP1008M 14-Pin Plastic • VQ2004J, VQ2006J 14-Pin Dual-In- Line • VQ2004P, VQ2006P Chip • Available as above specifications GEOMETRY DIAGRAM Gate Pad 0.005 (0.127) 0.007 (0.178) Source Pad 0.006 (0.152) 0.007 (0.178) 0.058 (1.47) ~1 I~ 0.053 (1.35) 7-178 ~SilicDnix ~ im::orporated TYPICAL CHARACTERISTICS Output Characteristics -2.5 -2.0 -1.5 10 (A) -1.0 / VG = -12 V I~ t ." ~ V -0.5 II -10 V -9 V -8 V -7 V -6 V -5 V o o -10 -20 -30 -40 -50 Vos (V) VPDV10 Ohmic Region Characteristics -2.
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