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VPDQ20
P-Channel Enhancement-Mode MOSFET
.:rSilicanix
~ incorporated
DESIGNED FOR:
@ Switching • Amplification
FEATURES
• High Breakdown> 200 V
• Low rDSlon) < 20 n
TYPE Single
IPACKAGE
DEVIC--E
TO-206AC • VP2020E
TO-92
• VP2020L BSS92
Chip
• Available as above specifications
GEOMETRY DIAGRAM
Gate Pad 0.010 (0.254) 0.0087 (0.2209)
Source Pad 0.0070
(0.1778)
....lh1Q.
(0.254)
7-168
T 0.038 (0.965)
1
~Siliconix ~ incorporated TYPICAL CHARACTERISTICS
Output Characteristics
-1.0 V s=-10Y
~/-0.8 ",--
-0.6 10
t(A) -0.4
,Y-0.2
i;"""
-8 V -7 V
6V
-S V -4 V
if
o o -10
-20 -30 VOS (V)
-3 V
-40 -so
VPDQ20
Ohmic Region Characteristics
-sao I I I
I- TJ = 25°C -400
J iLGS Lldv
yI;-6 I
-300
10 (mA) -200
-SV
",
./~ I----"
~ ~ ~4.SV
/~ :::;;.:: ...-~ -4 V
~ :,...
VPDQ20 Datasheet
