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SGT40U120FDR1P7 - 1200V FIELD STOP IGBT

Description

The SGT40U120FDR1P7 field stop IGBT adopts Silan Trench Gate Field Stop IV+ technology,

Features

  • low conduction loss and switching loss, positive temperature coefficient for easy parallel operation. This device is applicable to industrial welding, UPS, SMPS, and photovoltaic fields.

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Datasheet Details

Part number SGT40U120FDR1P7
Manufacturer Silan
File Size 302.37 KB
Description 1200V FIELD STOP IGBT
Datasheet download datasheet SGT40U120FDR1P7 Datasheet

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Full PDF Text Transcription

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Silan Microelectronics SGT40U120FDR1P7_Datasheet 40A, 1200V FIELD STOP IGBT DESCRIPTION The SGT40U120FDR1P7 field stop IGBT adopts Silan Trench Gate Field Stop IV+ technology, features low conduction loss and switching loss, positive temperature coefficient for easy parallel operation. This device is applicable to industrial welding, UPS, SMPS, and photovoltaic fields. FEATURES  40A, 1200V, VCE(sat)(typ.)=2.2V@IC=40A  Low conduction loss  Fast switching  High breakdown voltage NOMENCLATURE C 2 1 G 3 E 12 3 TO-247-3L SGT 40 U 120 F D R 1 P7 IGBT series Current, 70: 70A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V Package P7 : TO-247-3L 1,2,3… : Version No.
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