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SGT40T120FD3P7 - 1200V IGBT

Description

The SGT40T120FD3P7 IGBT is fabricated using Silan 4rd generation of trench field stop technology,

Features

  • low conduction loss and switching loss, positive temperature coefficient for easy parallel operation. This device is applicable to induction heating, UPS, SMPS, and PFC fields.

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Datasheet Details

Part number SGT40T120FD3P7
Manufacturer Silan
File Size 211.24 KB
Description 1200V IGBT
Datasheet download datasheet SGT40T120FD3P7 Datasheet

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Full PDF Text Transcription

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Silan Microelectronics SGT40T120FD3P7_Datasheet 40A, 1200V IGBT DESCRIPTION The SGT40T120FD3P7 IGBT is fabricated using Silan 4rd generation of trench field stop technology, features low conduction loss and switching loss, positive temperature coefficient for easy parallel operation. This device is applicable to induction heating, UPS, SMPS, and PFC fields. FEATURES  40A, 1200V, VCE(sat)(typ.)=2.3V@IC=40A  Low conduction loss  Ultra fast switching  High breakdown voltage NOMENCLATURE 1 G C 2 3 E 12 3 TO-247-3L IGBT series Current, 70: 70A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V SGT 40 T 120 F D 3 P7 ORDERING INFORMATION Part No.
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