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Silan Microelectronics
SGT40U120FD1P7_Datasheet
40A, 1200V FIELD STOP IGBT
DESCRIPTION
The SGT40U120FD1P7 field stop IGBT adopts Silan Trench Gate Field Stop IV+ technology, features low conduction loss and switching loss, positive temperature coefficient for easy parallel operation. This device is applicable to industrial welding, UPS, SMPS, and photovoltaic fields.
FEATURES
40A, 1200V, VCE(sat)(typ.)=2.2V@IC=40A Low conduction loss Fast switching High breakdown voltage
C 2 1 G
3 E
12 3 TO-247-3L
NOMENCLATURE
IGBT series
SGT 40 U120 F D 1 P7
Current, 70: 70A
N : N Channel NE : N-channel planar
gate with ESD T : Field Stop IIIIV U : Field Stop IV+ V : Field Stop V W: Field Stop VI X : Field Stop VII
Voltage, 65: 650V 120: 1200V
Package P7 : TO-247-3L
1,2,3 : Version No.