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SVFP10N60CAFJH - 600V N-CHANNEL MOSFET

This page provides the datasheet information for the SVFP10N60CAFJH, a member of the SVFP10N60CAFJ 600V N-CHANNEL MOSFET family.

Datasheet Summary

Description

SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 2 1 3 1.Gate 2.Drain 3.Source 12 3 1 TO-220FJ-3L 2 3 TO-220FJH-3L.
  • 10A, 600V, RDS(on)(typ. )=0.60@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

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Datasheet preview – SVFP10N60CAFJH

Datasheet Details

Part number SVFP10N60CAFJH
Manufacturer Silan Microelectronics
File Size 287.07 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVFP10N60CAFJH Datasheet
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Silan Microelectronics SVFP10N60CAFJ/FJH_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES 2 1 3 1.Gate 2.Drain 3.Source 12 3 1 TO-220FJ-3L 2 3 TO-220FJH-3L  10A, 600V, RDS(on)(typ.)=0.
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