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SVFP7N65CFJD - 650V N-CHANNEL MOSFET

Description

SVFP7N65CFJD/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 7A, 650V, RDS(on)(typ. )=1.1@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

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Datasheet Details

Part number SVFP7N65CFJD
Manufacturer Silan Microelectronics
File Size 386.93 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet SVFP7N65CFJD Datasheet
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Silan Microelectronics SVFP7N65CFJD/D/MJ_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP7N65CFJD/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  7A, 650V, RDS(on)(typ.)=1.1@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 1 123 3 TO-251J-3L 1.Gate 2.Dratin 3.
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