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SVFP14N60CFJD - 600V N-CHANNEL MOSFET

Description

SVFP14N60CFJD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • 14A, 600V, RDS(on)(typ. )=0.54@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 2 1 3 1.Gate 2.Dratin 3.Source 123 TO-220FJD-3L.

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Datasheet Details

Part number SVFP14N60CFJD
Manufacturer Silan Microelectronics
File Size 248.82 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVFP14N60CFJD Datasheet
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Silan Microelectronics SVFP14N60CFJD_Datasheet 14A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP14N60CFJD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  14A, 600V, RDS(on)(typ.)=0.54@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 1 3 1.Gate 2.Dratin 3.Source 123 TO-220FJD-3L ORDERING INFORMATION Part No.
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