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Silan Microelectronics
SVD640T/D/S_Datasheet
18A, 200V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD640T/D/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
2 1
3
1.Gate 2.Drain 3.Source
TO-263-2L
FEATURES
18A,200V,RDS(on)(typ.)=0.12@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
1 23
TO-220-3L
1 3
TO-252-2L
ORDERING INFORMATION
Part No.
SVD640T Datasheet
