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SVD640S - 200V N-CHANNEL MOSFET

This page provides the datasheet information for the SVD640S, a member of the SVD640T 200V N-CHANNEL MOSFET family.

Datasheet Summary

Description

SVD640T/D/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology.

Features

  • 18A,200V,RDS(on)(typ. )=0.12@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 1 23 TO-220-3L 1 3 TO-252-2L.

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Datasheet preview – SVD640S

Datasheet Details

Part number SVD640S
Manufacturer Silan Microelectronics
File Size 363.68 KB
Description 200V N-CHANNEL MOSFET
Datasheet download datasheet SVD640S Datasheet
Additional preview pages of the SVD640S datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVD640T/D/S_Datasheet 18A, 200V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD640T/D/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. 2 1 3 1.Gate 2.Drain 3.Source TO-263-2L FEATURES  18A,200V,RDS(on)(typ.)=0.12@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 1 23 TO-220-3L 1 3 TO-252-2L ORDERING INFORMATION Part No.
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