SVD640F Datasheet PDF - Silan Microelectronics 200V N-CHANNEL MOSFET Specs

SVD640F - 200V N-CHANNEL MOSFET

Datasheet Summary

Description

SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure middle/low-voltage VDMOS technology.

Features

18A,200V,RDS(on)(typ. )=0.12Ω@VGS=10V.
Low gate charge.
Low Crss.
Fast switching.
Improved dv/dt capability.

Datasheet Details

Part number	SVD640F
Manufacturer	Silan Microelectronics
File Size	401.76 KB
Description	200V N-CHANNEL MOSFET
Datasheet	SVD640F Datasheet
Additional preview pages of the SVD640F datasheet.

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Full PDF Text Transcription

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SVD640T/D/F_Datasheet 18A, 200V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure middle/low-voltage VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES  18A,200V,RDS(on)(typ.)=0.12Ω@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No.

Published: Jul 24, 2024 |