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SVD5N60AT - 600V N-CHANNEL MOSFET

This page provides the datasheet information for the SVD5N60AT, a member of the SVD5N60AF 600V N-CHANNEL MOSFET family.

Datasheet Summary

Description

SVD5N60AT/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology.

Features

  • ∗ 5A,600V,RDS(on) typ =2.0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

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Datasheet Details

Part number SVD5N60AT
Manufacturer Silan Microelectronics
File Size 539.72 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVD5N60AT Datasheet
Additional preview pages of the SVD5N60AT datasheet.

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Full PDF Text Transcription

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www.DataSheet.co.kr SVD5N60AT/SVD5N60AF 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD5N60AT/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ 5A,600V,RDS(on) typ =2.0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No.
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