Datasheet4U Logo Datasheet4U.com

SVD50N06D - MOSFET

Datasheet Summary

Description

SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transistor which is produced using Silan new structure VDMOS technology.

Features

  • ∗ 50A,60V,RDS(on)（typ）=18mΩ@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

📥 Download Datasheet

Datasheet preview – SVD50N06D

Datasheet Details

Part number SVD50N06D
Manufacturer Silan Microelectronics
File Size 435.77 KB
Description MOSFET
Datasheet download datasheet SVD50N06D Datasheet
Additional preview pages of the SVD50N06D datasheet.

📁 Similar Datasheet

  • SVD5804N - Power MOSFET (ON Semiconductor)
  • SVD101 - X Band VCO / PLO (Sanyo Semicon Device)
  • SVD102 - X Band VCO / PLO (Sanyo Semicon Device)
  • SVD201 - X Band VCO / PLO (Sanyo Semicon Device)
  • SVD202 - X Band VCO / PLO (Sanyo Semicon Device)
  • SVD301 - X Band VCO / PLO (Sanyo Semicon Device)
  • SVD302 - X Band VCO / PLO (Sanyo Semicon Device)
  • SVD4N60D - 600V N-Channel MOSFET (Silan)
  • SVD4N60DTR - 600V N-Channel MOSFET (Silan)
  • SVD4N60F - 600V N-Channel MOSFET (Silan)
Other Datasheets by Silan Microelectronics

Full PDF Text Transcription

Click to expand full text
SVD50N06T/D/MJ_Datasheet 50A, 60V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transistor which is produced using Silan new structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. It's widely used in electronic ballasts and low power SMPS. FEATURES ∗ 50A,60V,RDS(on)（typ）=18mΩ@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
Published: |