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SVD50N06MJ - MOSFET

This page provides the datasheet information for the SVD50N06MJ, a member of the SVD50N06D MOSFET family.

Datasheet Summary

Description

SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transistor which is produced using Silan new structure VDMOS technology.

Features

  • ∗ 50A,60V,RDS(on)（typ）=18mΩ@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

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Datasheet preview – SVD50N06MJ

Datasheet Details

Part number SVD50N06MJ
Manufacturer Silan Microelectronics
File Size 435.77 KB
Description MOSFET
Datasheet download datasheet SVD50N06MJ Datasheet
Additional preview pages of the SVD50N06MJ datasheet.

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Full PDF Text Transcription

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SVD50N06T/D/MJ_Datasheet 50A, 60V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transistor which is produced using Silan new structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. It's widely used in electronic ballasts and low power SMPS. FEATURES ∗ 50A,60V,RDS(on)（typ）=18mΩ@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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