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HYB5118160BSJ-70 - 1M x 16-Bit Dynamic RAM

Description

N.C.

P-SOJ-42 (400 mil) Vcc I/O1 I/O2 I/O3 I/O4 Vcc I/O5 I/O6 I/O7 I/O8 N.C.

N.C.

Features

  • include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5118160BSJ-50 HYB 5118160BSJ-60 HYB 5118160BSJ-70 Pin Names A0 to A9 A0 to A9 RAS OE I/O1-I/O16 UCAS LCAS WE Row Address Inputs Column Addess Inputs Row Address Strobe Output Enable Data Input/Output Upper Column Address Strobe Lower Column Address Strobe Read/Write Input Power Supply (+ 5 V) Ground (0 V) not connected Ordering Code Q67100.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB5118160BSJ-50 1M x 16-Bit Dynamic RAM
HYB5118160BSJ-60 1M x 16-Bit Dynamic RAM
HYB5118165BJ-50 1M x 16-Bit Dynamic RAM 1k & 4k Refresh
HYB5118165BJ-60 1M x 16-Bit Dynamic RAM 1k & 4k Refresh
HYB5118165BJ-70 1M x 16-Bit Dynamic RAM 1k & 4k Refresh

Full PDF Text Transcription

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1M x 16-Bit Dynamic RAM (1k-Refresh) HYB5118160BSJ-50/-60/-70 Advanced Information • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 90 35 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns • • Single + 5 V (± 10 %) supply Low power dissipation max. 1100 active mW (-50 version) max. 990 active mW (-60 version) max. 880 active mW (-70 version) 11 mW standby (TTL) 5.5.
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